Spectroscopy of competing mechanisms generating stimulated emission in gallium nitride
نویسندگان
چکیده
Two competing recombination mechanisms of stimulated emission in the vicinity of 145 K have been directly observed in the temperature dependence of the optical emission spectra for high-quality, unintentionally doped gallium nitride. Our analysis of the spectra indicates that exciton-exciton scattering is responsible for stimulated emission below 145 K, while at higher temperatures an electron-hole plasma becomes the dominant mechanism. © 2000 American Institute of Physics. @S0003-6951~00!02051-9#
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